| 发明名称 |
Edge rate control gate drive circuit and system for low side devices with driver FET |
| 摘要 |
An apparatus, comprising a load; an output FET having a drain coupled to the load; a first and second of a pair strong FETs, wherein: a) a source of the first of the pair of the strong FETs is coupled to the load; b) a drain of the first pair of the strong FETs is coupled to the source of the second of the of the pair of the strong FETs; the drain of the second pair of the strong FETs is coupled to a gate of the output FET; and a fixed current mirror is coupled to the gate of the first of the pair of the strong FETs. |
| 申请公布号 |
US9130560(B2) |
申请公布日期 |
2015.09.08 |
| 申请号 |
US201313754468 |
申请日期 |
2013.01.30 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Shook Adam L. |
| 分类号 |
H03K19/003;G05F3/16;H03K5/12 |
主分类号 |
H03K19/003 |
| 代理机构 |
|
代理人 |
Cooper Alan A. R.;Cimino Frank D. |
| 主权项 |
1. An apparatus, comprising:
a load; an output FET having a drain coupled to the load; a first and second of a pair strong FETs, wherein a) a source of the first of the pair of the strong FETs is coupled to the load; b) a drain of the first of the pair of the strong FETs is coupled to the source of the second of the pair of the strong FETs; the drain of the second of the pair of the strong FETs is coupled to a gate of the output FET; and a fixed current mirror is coupled to the gate of the first of the pair of the strong FETs. |
| 地址 |
Dallas TX US |
