| 摘要 |
The present invention provides a semiconductor apparatus which enables the improvement in breaking capacity. The semiconductor apparatus according to an embodiment includes: a semiconductor substrate; a plurality of first semiconductor layers of a first conductivity type which are formed on the surface of the semiconductor substrate, elongated in a first direction, and surrounded by a gate layer, wherein a gate insulating film is interposed; a plurality of second semiconductor layers of the first conductivity type which are located between the first semiconductor layers; a third semiconductor layer of the first conductivity type which is disposed on the end part of the first semiconductor layer in the first direction and surrounded by the gate layer, wherein the gate insulating film is interposed; a fourth semiconductor layer of a second conductivity type which is formed on the second semiconductor layer; a sixth semiconductor layer of the first conductivity type which is formed on the hidden side of the semiconductor substrate; a seventh semiconductor layer of the second conductivity type which is formed between the sixth semiconductor layer and the first, second, and third semiconductor layers; an emitter electrode which is electrically connected to the fourth semiconductor layer and the fifth semiconductor layer; and a collector electrode which is electrically connected to the sixth semiconductor layer. |
