摘要 |
The present invention is to provide an aligner structure capable of quickly and precisely aligning a substrate and a mask, by performing secondary relative displacement between a substrate (S) and a mask (M) with a relatively small displacement scale after finishing primary relative displacement between the substrate (S) and the mask (M) with a relatively large displacement scale. The aligner structure according to the present invention aligns the mask (M) and the substrate (S) before performing a process of depositing a thin film on the surface of the substrate (S). The aligner structure comprises: a primary alignment unit (100) for primarily aligning the substrate (S) and the mask (M) sequentially by the primary relative displacement between the substrate (S) and the mask (M); and a secondary alignment unit (200) for secondarily aligning the substrate (S) and the mask (M) sequentially by the secondary relative displacement between the substrate (S) and the mask (M) after the primary alignment by the primary alignment unit (100). The displacement scale of the secondary relative displacement is smaller than that of the primary relative displacement, thus the substrate and the mask can be quickly and precisely aligned by performing the secondary relative displacement between the substrate (S) and the mask (M) with the relatively small displacement scale after finishing the primary relative displacement between the substrate (S) and the mask (M) with the relatively large displacement scale. |