发明名称 PREPARATION METHOD OF REUSE TA TARGETS FOR SEMICONDUCTORS AND THE TA SPUTTERING TARGET PREPARED THEREBY
摘要 The present invention relates to a new manufacturing method to reuse a tantalum waste target consumed with sputter action by an ion, and a reused tantalum sputtering target manufactured by the method. According to the present invention, an existing tantalum waste target is reused to improve economic feasibility by reducing costs and shortening a processing time.
申请公布号 KR20150101647(A) 申请公布日期 2015.09.04
申请号 KR20140023200 申请日期 2014.02.27
申请人 HEE SUNG METAL LTD. 发明人 YU, JI SANG;HONG, GIL SOO;YANG, SEUNG HO;YOON, WON KYU
分类号 B22F3/15;B22F7/06;C23C14/34 主分类号 B22F3/15
代理机构 代理人
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