发明名称 |
PREPARATION METHOD OF REUSE TA TARGETS FOR SEMICONDUCTORS AND THE TA SPUTTERING TARGET PREPARED THEREBY |
摘要 |
The present invention relates to a new manufacturing method to reuse a tantalum waste target consumed with sputter action by an ion, and a reused tantalum sputtering target manufactured by the method. According to the present invention, an existing tantalum waste target is reused to improve economic feasibility by reducing costs and shortening a processing time. |
申请公布号 |
KR20150101647(A) |
申请公布日期 |
2015.09.04 |
申请号 |
KR20140023200 |
申请日期 |
2014.02.27 |
申请人 |
HEE SUNG METAL LTD. |
发明人 |
YU, JI SANG;HONG, GIL SOO;YANG, SEUNG HO;YOON, WON KYU |
分类号 |
B22F3/15;B22F7/06;C23C14/34 |
主分类号 |
B22F3/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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