| 摘要 |
The invention provides an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R 1 and R 2 each represent straight or branched C2-C5 alkyl, and R 3 represent methyl or ethyl. R 1 and R 2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD. |
