| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing generation of a leakage current between wells.SOLUTION: A semiconductor device 100 according to the present invention comprises: a first-conductivity-type epitaxial layer 20; a second-conductivity-type first well 51 which is provided on the epitaxial layer 20 and to which a first electric potential is applied; a second well 52 which is provided on the epitaxial layer 20 and to which a second electric potential different from the first electric potential is applied; a first-conductivity-type third well 53 provided on the epitaxial layer 20 between the first well 51 and the second well 52; a first-conductivity-type first impurity region 30 provided on the epitaxial layer 20 under the first well 51; a first MOS transistor 111 provided in the first well 51; a second MOS transistor 112 provided in the second well 52; and a third MOS transistor 113 provided in the third well 53. The impurity concentration of the first impurity region 30 is higher than that of the epitaxial layer 20. |
