THIN FILM TRANSISTOR

摘要

Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.

主权项

1. A thin film transistor comprising an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a passivation layer in direct contact with the oxide semiconductor layer,
wherein a protrusion formed on a surface of the oxide semiconductor layer, the surface being in direct contact with the passivation layer, has a maximum height of less than 5 nm.