发明名称 |
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE |
摘要 |
A method of cleaning a semiconductor structure includes rotating a semiconductor structure. The method of cleaning further includes cleaning the semiconductor structure with a hydrogen fluoride (HF)-containing gas. A method of forming a semiconductor device includes forming a recess in a source/drain (S/D) region of a transistor. The method of forming further includes cleaning the recess with a HF-containing gas, the HF-containing gas having an oxide removing rate of about 2 nanometer/minute (nm/min) or less. The method of forming further includes epitaxially forming a strain structure in the recess after the cleaning the recess, the strain structure providing a strain to a channel region of the transistor. |
申请公布号 |
US2015249011(A1) |
申请公布日期 |
2015.09.03 |
申请号 |
US201514713211 |
申请日期 |
2015.05.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YAO Liang-Gi;CHEN Chia-Cheng;KUAN Ta-Ming;XU Jeff J.;WANN Clement Hsingjen |
分类号 |
H01L21/02;H01L21/8234;H01L29/78 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of cleaning a semiconductor structure, the method comprising:
rotating a semiconductor structure; and cleaning the semiconductor structure with a hydrogen fluoride (HF)-containing gas. |
地址 |
Hsinchu TW |