| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME |
| 摘要 |
In one embodiment, a semiconductor device includes a substrate, a first inter layer dielectric disposed on the substrate, and a second inter layer dielectric disposed on the first inter layer dielectric. Furthermore, one of the first and second inter layer dielectrics is a first insulator, and the other of the first and second inter layer dielectrics is a second insulator. In addition, the first insulator has a property capable of having a tensile stress in a case where the first insulator is annealed, and the second insulator has a property capable of having a compression stress in a case where the second insulator is annealed. |
| 申请公布号 |
US2015249010(A1) |
申请公布日期 |
2015.09.03 |
| 申请号 |
US201414302716 |
申请日期 |
2014.06.12 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
KUBOTA Hiroshi |
| 分类号 |
H01L21/02;H01L23/00;H01L27/115;H01L29/792;H01L29/66 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; a first inter layer dielectric disposed on the substrate; and a second inter layer dielectric disposed on the first inter layer dielectric, wherein one of the first and second inter layer dielectrics is a first insulator, the other of the first and second inter layer dielectrics is a second insulator, the first insulator has a property capable of having a tensile stress in a case where the first insulator is annealed, and the second insulator has a property capable of having a compression stress in a case where the second insulator is annealed. |
| 地址 |
Minato-ku JP |
