METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT

摘要

The invention relates to a method for producing a semiconductor layer sequence, which method comprises the following steps: providing a growth substrate (50) having a growth surface (51) on a growth side (50a), growing a first nitridic semiconductor layer (10) on the growth side, growing a second nitridic semiconductor layer (20) on the first nitridic semiconductor layer (10), wherein the second nitridic semiconductor layer (20) has at least one opening (21) or at least one opening (21) is produced in the second nitridic semiconductor layer (20) or at least one opening (21) in the second nitridic semiconductor layer (20) arises during the growth, removing at least part of the first nitridic semiconductor layer (10) through the openings (21) in the second nitridic semiconductor layer (20), growing a third nitridic semiconductor layer (30) on the second nitridic semiconductor layer (20), wherein the third nitridic semiconductor layer (30) covers the openings (21) at least in some locations.