| 摘要 |
<p>Provided in the present invention is a thin film transistor substrate including a substrate, a first thin film transistor, and a second thin film transistor. The first thin film transistor is arranged on a substrate, and includes a polycrystal semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode. The second thin film transistor is arranged on the substrate to be separated from the first thin film transistor, and includes a oxide semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode. the first gate electrode and the second gate electrode are arranged to be separated from each other on the same layer on the upper surface of a gate insulation film. A first and second middle insulation film having a nitride film and an oxide film sequentially stacked is arranged on the upper surface of the first gate electrode and the second gate electrode. An island-shaped dummy semiconductor layer and a buffer layer located on the dummy semiconductor are included between the substrate and the oxide semiconductor layer.</p> |
