SILICON/GERMANIUM NANOPARTICLE INK, DOPED PARTICLE, PRINTING METHOD, PROCESS FOR SEMICONDUCTOR APPLICATION

摘要

PROBLEM TO BE SOLVED: To provide a silica/germania dispersion that can be used for forming a deposition of a selectively doped semiconductor material, such as for forming a photovoltaic battery or forming a printed electronic circuit.SOLUTION: A dispersion is provided, comprising a liquid and doped silica/germania nanoparticles, in which the doped silica/germania nanoparticles have an average primary particle size of 1 to 100 nm and a volume average particle size of not more than 500 nm. The dispersion has 0.1 to 20 wt.% concentration of the silica/germania nanoparticles and contains a dopant element by 1.0×10to 15 atomic% with respect to the silicon/germanium atoms in the silica/germania nanoparticles. The silica/germania particles contain a surface modifying composition selected to match the liquid.