OXIDE SINTERED BODY, SPUTTERING TARGET, AND OXIDE SEMICONDUCTOR THIN FILM OBTAINED USING SPUTTERING TARGET

摘要

An oxide sintered body which, when made into an oxide semiconductor thin film by sputtering, can achieve low carrier density and high carrier mobility, and a sputtering target using said oxide sintered body are provided. This oxide sintered body contains indium, gallium and zinc as oxides. The gallium content, expressed as the atomic ratio Ga/(In+Ga), is 0.08 or greater and less than 0.20, and the zinc content, expressed as the atomic ratio Zn/(In+Ga+Zn), is 0.0001 or greater and less than 0.08. This crystalline oxide semiconductor thin film is formed with the oxide sintered body as a sputtering target, and can achieve a carrier density of 8.0×1017cm-3 or less and a carrier mobility of 10cm2/V*s or greater.