| 摘要 |
PROBLEM TO BE SOLVED: To improve the high frequency characteristics of a semiconductor device using the electron tunneling effect. ! SOLUTION: A semiconductor device comprises: a first semiconductor layer formed on a substrate; a second semiconductor layer formed on the first semiconductor layer; a third semiconductor layer formed on the second semiconductor layer; a fourth semiconductor layer formed on the third semiconductor layer; an insulating film formed on side surfaces of the second and third semiconductor layers; a gate electrode formed so as to be in contact with the insulating film; a source electrode formed on the first semiconductor layer; and a drain electrode formed on the fourth semiconductor layer. The first and fourth semiconductor layers are formed of a first-conductivity-type semiconductor material. The third semiconductor layer is formed of a second-conductivity-type semiconductor material. ! COPYRIGHT: (C)2015,JPO&INPIT |
