发明名称 BACKLIGHT UNIT
摘要 A backlight unit includes: a light guide plate of an entirely flat structure; a light emitting element disposed on at least one side of the light guide plate; a first reflection part disposed under the light guide plate and having one side thereof extended to a region where the light emitting element is positioned; a second reflection part disposed on the light emitting element; and a housing for accommodating the light guide plate, the light emitting element, and the first and second reflection parts, wherein the housing has a second side which is vertically extended upwards with respect to a first side which defines a lateral cross section of the housing in which the light emitting element is accommodated as the lower side, and a third side which is vertically extended inwards with respect to the second side.
申请公布号 US2015247965(A1) 申请公布日期 2015.09.03
申请号 US201314369993 申请日期 2013.11.15
申请人 Seoul Semiconductor Co., Ltd. 发明人 Song Young Jun
分类号 F21V8/00;H01L33/50 主分类号 F21V8/00
代理机构 代理人
主权项 1. A backlight unit comprising: a light guide plate having an overall flat structure; a light emitting device disposed on at least one side of the light guide plate; a first reflector disposed under the light guide plate and having one side extending to an area in which the light emitting device is disposed; a second reflector disposed on the light emitting device; and a housing receiving the light guide plate, the light emitting device, and the first and second reflectors, wherein the housing has a side portion on which the light emitting device is received, the side portion having a cross-section including a first side defined as a lower surface of the housing, a second side vertically extending from the first side in an upper direction of the housing and a third side vertically extending from the second side in an inner direction of the housing, and wherein the light emitting device comprises a flip-chip type light emitting diode chip and a wavelength conversion layer covering an upper surface and both side surfaces of the light emitting diode chip.
地址 Ansan-si KR