发明名称 |
BACKLIGHT UNIT |
摘要 |
A backlight unit includes: a light guide plate of an entirely flat structure; a light emitting element disposed on at least one side of the light guide plate; a first reflection part disposed under the light guide plate and having one side thereof extended to a region where the light emitting element is positioned; a second reflection part disposed on the light emitting element; and a housing for accommodating the light guide plate, the light emitting element, and the first and second reflection parts, wherein the housing has a second side which is vertically extended upwards with respect to a first side which defines a lateral cross section of the housing in which the light emitting element is accommodated as the lower side, and a third side which is vertically extended inwards with respect to the second side. |
申请公布号 |
US2015247965(A1) |
申请公布日期 |
2015.09.03 |
申请号 |
US201314369993 |
申请日期 |
2013.11.15 |
申请人 |
Seoul Semiconductor Co., Ltd. |
发明人 |
Song Young Jun |
分类号 |
F21V8/00;H01L33/50 |
主分类号 |
F21V8/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A backlight unit comprising:
a light guide plate having an overall flat structure; a light emitting device disposed on at least one side of the light guide plate; a first reflector disposed under the light guide plate and having one side extending to an area in which the light emitting device is disposed; a second reflector disposed on the light emitting device; and a housing receiving the light guide plate, the light emitting device, and the first and second reflectors, wherein the housing has a side portion on which the light emitting device is received, the side portion having a cross-section including a first side defined as a lower surface of the housing, a second side vertically extending from the first side in an upper direction of the housing and a third side vertically extending from the second side in an inner direction of the housing, and wherein the light emitting device comprises a flip-chip type light emitting diode chip and a wavelength conversion layer covering an upper surface and both side surfaces of the light emitting diode chip. |
地址 |
Ansan-si KR |