发明名称 |
INHIBITOR PLASMA MEDIATED ATOMIC LAYER DEPOSITION FOR SEAMLESS FEATURE FILL |
摘要 |
Systems and methods for depositing a film in a substrate processing system include: a step of performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit a film on a substrate including a feature; a step of exposing the substrate to inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature after the first ALD cycle; and a step of performing a second ALD cycle in the processing chamber to deposit the film on the substrate after the predetermined period. |
申请公布号 |
KR20150101431(A) |
申请公布日期 |
2015.09.03 |
申请号 |
KR20150027536 |
申请日期 |
2015.02.26 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
TANG WEI;VAN SCHRAVENDIJK BART;QIAN JUN;KANG HU;LAVOIE ADRIEN;PADHI DEENESH;SMITH DAVID C. |
分类号 |
C23C16/455 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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