发明名称 INHIBITOR PLASMA MEDIATED ATOMIC LAYER DEPOSITION FOR SEAMLESS FEATURE FILL
摘要 Systems and methods for depositing a film in a substrate processing system include: a step of performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit a film on a substrate including a feature; a step of exposing the substrate to inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature after the first ALD cycle; and a step of performing a second ALD cycle in the processing chamber to deposit the film on the substrate after the predetermined period.
申请公布号 KR20150101431(A) 申请公布日期 2015.09.03
申请号 KR20150027536 申请日期 2015.02.26
申请人 LAM RESEARCH CORPORATION 发明人 TANG WEI;VAN SCHRAVENDIJK BART;QIAN JUN;KANG HU;LAVOIE ADRIEN;PADHI DEENESH;SMITH DAVID C.
分类号 C23C16/455 主分类号 C23C16/455
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