发明名称 |
ETCHING METHOD, ETCHANT USED THEREFOR, ETCHANT KIT AND SEMICONDUCTOR SUBSTRATE PRODUCT MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide an etching method which is performed on a germanium-containing layer to allow a layer containing specific metal to be selectively removed and which exhibits excellent etching characteristics; and provide an etchant used for the etching method, an etchant kit and a semiconductor substrate product manufacturing method.SOLUTION: To provide an etching method which is performed on a germanium-containing layer to allow a layer containing specific metal to be selectively removed and which exhibits excellent etching characteristics; and provide an etchant used for the etching method, an etchant kit and a semiconductor substrate product manufacturing method. |
申请公布号 |
JP2015159264(A) |
申请公布日期 |
2015.09.03 |
申请号 |
JP20140094837 |
申请日期 |
2014.05.01 |
申请人 |
FUJIFILM CORP |
发明人 |
TAKAHASHI TOMOMI;KAMIMURA TETSUYA;KOYAMA AKIKO;MIZUTANI ATSUSHI;SUGISHIMA YASUO |
分类号 |
H01L21/308;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/417;H01L29/78 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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