METHOD OF ENHANCING HIGH-k FILM NUCLEATION RATE AND ELECTRICAL MOBILITY IN A SEMICONDUCTOR DEVICE BY MICROWAVE PLASMA TREATMENT

摘要

A method for forming a semiconductor device is provided in several embodiments. According to one embodiment, the method includes providing a substrate in a process chamber, flowing a process gas consisting of hydrogen (H2) and optionally a noble gas into the process chamber, forming plasma excited species from the process gas by a microwave plasma source. The method further includes exposing an interface layer on the substrate to the plasma excited species to form a modified interface layer, and depositing a high dielectric constant (high-k) film by atomic layer deposition (ALD) on the modified interface layer. In some embodiments, the modified interface layer has higher electrical mobility than the interface layer, and the high-k film nucleates at a higher rate on the modified interface layer rate than on the interface layer.

主权项

1. A method for forming a semiconductor device, the method comprising:
providing a substrate in a process chamber; flowing a process gas consisting of hydrogen (H2) and optionally a noble gas into the process chamber; forming plasma excited species from the process gas by a microwave plasma source; exposing an interface layer on the substrate to the plasma excited species to form a modified interface layer; and depositing a high dielectric constant (high-k) film by atomic layer deposition (ALD) on the modified interface layer.