EPITAXIAL SILICON CARBIDE WAFER MANUFACTURING METHOD

摘要

The present invention provides a manufacturing method by which it is possible to obtain, when manufacturing an epitaxial SiC wafer by epitaxial growth of SiC on an SiC substrate, an epitaxial SiC wafer having a high-quality epitaxial film with even less comets and lamination defects than in the past. This epitaxial silicon carbide wafer manufacturing method is characterized in that the pre-growth atmosphere gas that flows into a growth furnace prior to the start of epitaxial growth contains hydrogen gas, with the remainder being an inactive gas and unavoidable impurities, and the hydrogen gas content is 0.1-10.0 vol% with respect to the inactive gas.