BI-DIRECTIONAL IGBT COMPONENT

摘要

A bi-directional IGBT component, which relates to the technical field of power semiconductor components. The cellular structure of the bi-directional IGBT component comprises two MOS structures symmetrically arranged on the front side and the back side of a substrate drift region; a highly doped buried layer providing a carrier storage function or a electric field stop function is arranged between the substrate drift region and the MOS structure, and the substrate drift region adopts a longitudinal full-super junction or semi-super junction structure. The bi-directional IGBT structure has symmetrical positive and reverse characteristics and has a thinner drift region and better carrier concentration distribution and electric field distribution under the same component withstand voltage, so that the component obtains better positive turn-on characteristics and trade-off between the positive turn-on characteristics and turn-off loss characteristics.