发明名称 SILICON SOLAR CELLS WITH EPITAXIAL EMITTERS
摘要 Embodiments of the disclosure generally relate to forming solar cells having epitaxial emitters. The emitters of the solar cells, as well as the bases of the solar cells, are epitaxially grown in a process chamber using a template substrate to form an epitaxial substrate. During the formation process of the epitaxial substrate, dopants can be introduced into the process chamber to dope the emitters and the bases with desired dopant profiles and concentrations. In one example, the epitaxial material is silicon and the dopants are n-type and p-type dopants.
申请公布号 WO2015130672(A1) 申请公布日期 2015.09.03
申请号 WO2015US17297 申请日期 2015.02.24
申请人 APPLIED MATERIALS, INC. 发明人 GEE, JAMES M.;RENSHAW, JOHN
分类号 H01L31/04;H01L31/18 主分类号 H01L31/04
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