| 摘要 |
A semiconductor fin is on a substrate, and extends in a longitudinal direction parallel to the substrate. The fin projects, in a vertical direction, to a fin top at a fin height above the substrate. An embedded fin stressor element is embedded in the fin. The fin stressor element is configured to urge a vertical compression force within the fin, parallel to the vertical direction. Optionally, the semiconductor material includes silicon, and embedded fin stressor element includes silicon dioxide. |
