| 摘要 |
PROBLEM TO BE SOLVED: To provide a configuration in a semiconductor device consisting of a wide bandgap semiconductor, capable of integrating a semiconductor switching element and a protective circuit. ! SOLUTION: A vertical type MOSFET comprises: a semiconductor substrate (10) consisting of silicon carbide; a drift layer (12); a first well region (14); a first source region (16); a first gate insulation film (22); a first gate electrode (24); a first drain electrode (33); and a first source electrode (28). A diode (104) comprises: a second well region (20); and an impurity region (40). The impurity region (40) is electrically connected to the first gate electrode (24) through a contact electrode (46) and a gate pad electrode (30). ! COPYRIGHT: (C)2015,JPO&INPIT |
