TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN AND METHOD FOR MANUFACTURING TRANSISTOR HAVING NITRIDE SEMICONDUCTOR USED THEREIN

摘要

A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMI) having a nitride semiconductor used therein is removed only in a region directly below a gate electrode and in a vicinity of the region, and a length of a portion where the AlN spacer layer is not present is sufficiently smaller than a distance between a source electrode and a drain electrode.

主权项

1. A transistor having a nitride semiconductor used therein, comprising: a channel layer through which electrons run; a barrier layer that is provided above the channel layer and contains at least one of indium, aluminum and gallium, and nitrogen; and a gate electrode, a source electrode, and a drain electrode that are arranged on the barrier layer,
the transistor further comprising a spacer layer that is inserted between the barrier layer and the channel layer, and that is larger in polarization than the barrier layer, wherein the spacer layer is not present in a region directly below the gate electrode.