发明名称 |
METHOD FOR MODIFYING AN INITAIL STRESS STATE OF AN ACTIVE LAYER TO A FINAL STRESS STATE |
摘要 |
This process comprises steps of: a) providing a first substrate comprising the active layer made of a first material of Young's modulus E1 and of thickness h1; b) providing a second substrate made of a second material of Young's modulus E2 and of thickness h2; c) bending the first substrate and the second substrate such that they each have a curved shape of a radius of curvature R; d) joining the second substrate to the active layer such that the second substrate closely follows the shape of the first substrate; and e) re-establishing the initial at-rest shape of the second substrate, the process being noteworthy in that the second material of the second substrate is a flexible material respecting the relationship E2/E1<10−2, in that the thickness of the second substrate respects the relationship h2/h1≧104, and in that the radius of curvature respects the relationship;R=h22ɛ. |
申请公布号 |
US2015249033(A1) |
申请公布日期 |
2015.09.03 |
申请号 |
US201314438175 |
申请日期 |
2013.10.11 |
申请人 |
SOITEC |
发明人 |
Le Vaillant Yves-Matthieu;Navarro Etienne |
分类号 |
H01L21/762;H01L41/33;H01L41/053;H01L41/187;H01L23/538;H01L29/06 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
1. A method for modifying an initial strain state of an active layer to a final strain state denoted ε, the process comprising steps of:
a) providing a first substrate comprising the active layer in the initial strain state, the active layer comprising a first material having a Young's modulus denoted E1, the active layer having a thickness denoted h1; b) providing a second substrate comprising a flexible second material having a Young's modulus denoted E2, the second substrate having a thickness denoted h2, the second substrate having an initial shape at rest and selecting the second substrate and the flexible second material such that E2/E1<10−2 and such that h2/h1≧104; c) bending the first substrate and the second substrate such that they each have a curved shape of substantially identical radius of curvature denoted R, and selecting the radius of curvature such thatR=h22ɛ; d) joining the second substrate to the active layer such that the second substrate closely follows the shape of the first substrate; and e) re-establishing the initial at-rest shape of the second substrate such that the active layer has the final strain state. |
地址 |
Crolles Cedex FR |