SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE CRYSTAL INGOT AND SILICON CARBIDE WAFER

摘要

The silicon carbide crystal ingot (1) pertaining to an embodiment of the present invention is provided with a plurality of first crystal layers (3) and a plurality of second crystal layers (4) arranged in alternating fashion and each including donors or acceptors, respectively, and the concentration of donors or acceptors in each second crystal layer (4) is higher than the concentration of donors or acceptors in the first crystal layer (3) above or below and adjacent thereto.