SEMICONDUCTOR PROCESS

摘要

A semiconductor process of the present invention is described as follows. A substrate is provided, and a material layer is deposited on the substrate using an organic precursor as a reactant gas. A plasma treatment is conducted immediately after depositing the material layer, wherein plasma is continuously supplied during depositing the material layer and the plasma treatment. A pump-down step is conducted.

主权项

1. A semiconductor process, comprising the following steps in the sequence set forth:
providing a substrate in a chamber; introducing an organic precursor and a reactant gas into the chamber; depositing a material layer on the substrate in a presence of plasma; turning off the organic precursor and continuing to supply the plasma during a plasma treatment after the material layer is formed; and conducting a pump-down step.