NON-VOLATILE RESISTIVE RANDOM ACCESS MEMORY ELEMENT AND METHOD FOR PRODUCING SAME

摘要

The present invention relates to a non-volatile resistive random access memory element and a method for producing same. More specifically, the non-volatile resistive random access memory element, which is includes an insulating layer between conductive layers, comprises: a first electrode; a first metal oxide insulating layer adjacent to the first electrode; a metal nanoparticle layer adjacent to the first metal oxide insulating layer; a second metal oxide insulating layer adjacent to the metal nanoparticle layer; and a second electrode adjacent to the second metal oxide layer.