<p>The present invention relates to a method for fabricating a semiconductor device. The present invention relates to a method for fabricating a semiconductor device which can increase breakdown voltage without a separate epi layer or a buried layer in a horizontal type MOSFET device for high voltage.</p>
申请公布号
KR20150101043(A)
申请公布日期
2015.09.03
申请号
KR20140022069
申请日期
2014.02.25
申请人
MAGNACHIP SEMICONDUCTOR, LTD.
发明人
HEBERT FRANCOIS;SUN I SHAN;KIM, YOUNG BAE;KIM, YOUNG JU;KIM, KWANG IL;OH, IN TAEK;MOON, JIN WOO
