| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment method capable of performing activation of junction in a deep region without causing warpage or cracking of a substrate.SOLUTION: A substrate is irradiated with flash light having a first peak intensity and the surface temperature thereof is raised to a treatment temperature equal to or higher than an activation temperature. Subsequently, the substrate is irradiated with flash light having a second peak intensity lower than the first peak intensity, and the surface temperature thereof is maintained at the treatment temperature for a predetermined time or longer by heat insulation effect of the flash light irradiation. Since a temperature in a deep region in the surface of the substrate can be raised above the activation temperature without overheating a shallow region, activation of junction in the deep region can be carried out without causing warpage or cracking of the substrate. |
