CIRCUIT ARRANGEMENT

摘要

A circuit arrangement with at least a source contact (7), a gate contact (6), and a Schottky-Reverse contact (2), which is embodied as a Schottky-contact above a transistor channel and connected to the source contact such that in a return operation electrons can flow from a drain contact (5, 5.1, 5.2) via the Schottky-Reverse contact to the source contact. The circuit arrangement includes at least two transistor sections (A, A′, B, B′), with a first of the transistor sections (A, A′) including the Schottky-Reverse contact and a second of the transistor section (B, B′) being embodied without the Schottky-Reverse contact. The two transistor sections (A, A′, B, B′) are arranged alternating and embodied such that at least in a forward operation electrons can flow in a transistor channel from a source contact (7) to the drain contact (5, 5.1, 5.2), circumventing an area of influence (12) of the Schottky-Reverse contact.

主权项

1. A circuit arrangement comprising:
at least a source contact (7), a gate contact (6), a Schottky-Reverse contact (2), embodied as a Schottky-contact above a transistor channel and connected to the source contact (7) such that in a return operation electrons flow from a drain contact (5, 5.1, 5.2) via the Schottky-Reverse contact (2) to the source contact (7), at least first and second transistor sections (A, A′, B, B′), with the first transistor section (A, A′) comprising the Schottky-Reverse contact (2) and the second transistor section (B, B′) embodied without the Schottky-Reverse contact, the two transistor sections (A, A′, B, B′) arranged alternating and embodied such that at least in a forward operation electrons can flow, in the transistor channel from the source contact (7) to the drain contact (5, 5.1, 5.2), circumventing an area of influence (12) of the Schottky-Reverse contact.