SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICOUNDUCTOR DEVICE

摘要

A forward termination structure that surrounds an active region is provided between the active region and a p+ isolation region. A reverse termination structure that surrounds the forward termination structure is provided between the forward termination structure and the p+ isolation region. The forward termination structure is formed of a plurality of first field limited rings (“FLR”) and a first filed plat (“FP”) conductively connected to the first FLR. The reverse termination structure is formed of a plurality of second FLR and second FP conductively connected to the second FLR. In the reverse termination structure, a second n-type region which is in contact with the p+ isolation region and which includes at least one of the second FLRs is provided on a surface layer of the front surface of an n− semiconductor substrate.

主权项

1. A semiconductor device comprising:
a second conductivity-type isolation region provided on a side surface of a first conductivity-type semiconductor substrate so as to extend from a front surface of the first conductivity-type semiconductor substrate to reach a back surface of the first conductivity-type semiconductor substrate; a first edge termination region provided between an active region and the second conductivity-type isolation region so as to surround the active region; a second edge termination region provided between the first edge termination region and the second conductivity-type isolation region so as to surround the first edge termination region; a plurality of second conductivity-type semiconductor regions selectively provided in a surface layer of the front surface of the first conductivity-type semiconductor substrate in the first and second edge termination regions; a conductive film being in contact with the second conductivity-type semiconductor region; and a first conductivity-type semiconductor region provided in the surface layer of the front surface of the first conductivity-type semiconductor substrate in the second edge termination region so as to be in contact with second conductivity-type isolation region and also be in contact withat least one second conductivity-type semiconductor region, with the first conductivity-type semiconductor region exhibiting lower resistivity than the first conductivity-type semiconductor substrate.