发明名称 METHOD FOR MANUFACTURING METAL-OXIDE FILM, METAL-OXIDE FILM, THIN-FILM TRANSISTOR, AND ELECTRONIC DEVICE
摘要 This invention provides a method for manufacturing a metal-oxide film and an application therefor. Said method has a precursor-film formation step in which a solution containing a solvent and at least one metal component, namely iridium, is applied to a substrate to form a metal-oxide precursor film and a conversion step in which, with the metal-oxide precursor film heated, said metal-oxide precursor film is converted to a metal-oxide film by exposure to ultraviolet light in an atmosphere that has an oxygen concentration of no more than 80,000 ppm.
申请公布号 WO2015129104(A1) 申请公布日期 2015.09.03
申请号 WO2014JP79770 申请日期 2014.11.10
申请人 FUJIFILM CORPORATION 发明人 TAKATA, MASAHIRO
分类号 H01L21/336;H01L21/288;H01L21/368;H01L29/786;H01L51/50;H05B33/14 主分类号 H01L21/336
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