| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method of the same, which can inhibit cracks and the like caused by a difference in thermal expansion coefficients of materials.SOLUTION: The compound semiconductor device comprises: a substrate 11; a compound semiconductor laminate structure 13 formed above the substrate 11; an AlN-based stress relaxation layer 12 provided between the substrate 11 and the compound semiconductor laminate structure 13; a gate electrode 17g, a source electrode 17s and a drain electrode 17d which are formed above the compound semiconductor laminate structure 13. The stress relaxation layer 12 includes dents 12a each having a depth of 5 nm and over with a number density of 2×10cmand over, or dents 12a each having a depth of 7 nm and over with a number density of 8×10cmand over formed on a surface which contacts the compound semiconductor laminate structure 13. A skewness at the surface of the stress relaxation layer 12, which contacts the compound semiconductor laminate structure 13 is negative. |
