发明名称 |
DEPOSITING AN ETCH STOP LAYER BEFORE A DUMMY CAP LAYER TO IMPROVE GATE PERFORMANCE |
摘要 |
An improved method for fabricating a semiconductor device is provided. The method includes: depositing a dielectric layer on a substrate; depositing a first cap layer on the dielectric layer; depositing an etch stop layer on the dielectric layer; and depositing a dummy cap layer on the etch stop layer to form a partial gate structure. Also provided is a partially formed semiconductor device. The partially formed semiconductor device includes: a substrate; a dielectric layer on the substrate; a first cap layer on the dielectric layer; an etch stop layer on the dielectric layer; and a dummy cap layer on the etch stop layer forming a partial gate structure. |
申请公布号 |
US2015249136(A1) |
申请公布日期 |
2015.09.03 |
申请号 |
US201414195330 |
申请日期 |
2014.03.03 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
ZHOU Feng;LUO Tien-Ying;WANG Haiting;NAGAIAH Padmaja;LALOE Jean-Baptiste;FERAIN Isabelle Pauline;LEE Yong Meng |
分类号 |
H01L29/40;H01L21/311;H01L29/51 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device comprising:
depositing a dielectric layer on a substrate; depositing a first cap layer on the dielectric layer; depositing an etch stop layer on the dielectric layer; and depositing a dummy cap layer on the etch stop layer to form a partial gate structure. |
地址 |
Grand Cayman KY |