METHOD FOR METALLIZING DIELECTRIC SUBSTRATE SURFACE, AND DIELECTRIC SUBSTRATE PROVIDED WITH METAL FILM

摘要

The present invention relates to a method for forming a silver thin film layer by treating a dielectric substrate surface with atmospheric-pressure plasma using rare gas to generate peroxide radicals; reacting a grafting agent to fix a functional group that forms a coordinate bond with silver ions; coating with a silver-containing composition comprising 10 to 50 mass% of a silver compound (A) of formula (1) and 50 to 90 mass% of an amine compound (B) of formula (2); and heating and curing to form the silver thin film layer. The method makes it possible to form a metal film that is suitable for a dielectric substrate, without a delay in the signal propagation speed or an increase in the power consumption, and that has high adhesion even to a surface of a fluorine resin having extremely low adhesion. (R1: hydrogen, -(CY2)a-CH3 or ((CH2)b-O-CHZ)c-CH3; R2: -(CY2)d-CH3 or -((CH2)e-O-CHZ)f-CH3. Y: hydrogen atom or -(CH2)g-CH3; Z: hydrogen atom or -(CH2)h-CH3. a: an integer 0 to 8; b: an integer 1 to 4; c: an integer 1 to 3; d: an integer 1 to 8; e: an integer 1 to 4; f: an integer 1 to 3; g: an integer 1 to 3; h: an integer 1 to 2.)