SEMICONDUCTOR SUBSTRATE FOR FLASH LAMP ANNEALING, ANNEALED SUBSTRATE, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

摘要

The present invention is a semiconductor substrate for flash lamp annealing that: is used in a production step in which ions are implanted, a p-n junction is formed on the surface of the semiconductor substrate, and ion implantation defects are repaired by flash lamp annealing; and that is characterized by the carbon concentration of the semiconductor substrate being 0.5 ppma or less. As a result, the present invention provides a semiconductor substrate for flash lamp annealing that makes it possible to easily and reliable prevent residual ion implantation defects in a device that is subjected to a flash lamp annealing step.