METHOD FOR FORMING RUTHENIUM CONTAINING THIN FILM BY ATOMIC LAYER DEPOSITION

摘要

According to an embodiment of the present invention, a method to form a ruthenium-containing thin film by atomic layer deposition comprises: a step of supplying a ruthenium-containing precursor to a substrate inside a chamber; a step of purging the ruthenium-containing precursor from the chamber; a step of supplying a reaction gas to the substrate; a step of purging the reaction gas from the chamber; and a step of thermally treating the deposited ruthenium thin film. The reaction gas is an ammonia gas.