DRY ETCHING GAS AND DRY ETCHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a dry etching gas which allows for patterning of a contact hole, or the like, having a high aspect ratio.SOLUTION: The dry etching gas contains a compound having a CFCF fragment bonded directly to a double bond (excepting, CFCF=CFCF=CF). In particular, the dry etching gas preferably contains CFCF=CFand CHF.