摘要 |
Provided are a thin film transistor substrate having various types of thin film transistors arranged on same substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer. |
申请人 |
LG DISPLAY CO., LTD. |
发明人 |
LEE, YOUNG JANG;SON, KYUNG MO;CHO, SEONG PIL;PARK, JAE HOON;LEE, SO HYUNG;NOH, SANG SOON;PARK, MOON HO;LEE, SUNG JIN;KO, SEUNG HYO;JEONG, MI JIN |