RADIOFREQUENCY ADJUSTMENT FOR INSTABILITY MANAGEMENT IN SEMICONDUCTOR PROCESSING

摘要

Methods, systems, and computer programs are presented for reducing chamber instability while processing a semiconductor substrate. One method includes an operation for identifying a first recipe with steps having an operating frequency equal to the nominal frequency of a radiofrequency (RF) power supply. Each step is analyzed with the nominal frequency, and the analysis determines if any step produces instability at the nominal frequency. The operating frequency is adjusted, for one or more of the steps, when the instability in the one or more steps exceeds a threshold. The adjustment acts to find an approximate minimum level of instability. A second recipe is constructed after the adjustment, such that at least one of the steps includes a respective operating frequency different from the nominal frequency. The second recipe is used to etch the one or more layers disposed over the substrate in the semiconductor processing chamber.

主权项

1. A system for processing a substrate, the system comprising:
a chamber; an RF power supply for providing RF power to the chamber, the RF power supply being defined to operate in one operating frequency from a plurality of different oscillating frequencies; and a system controller coupled to the chamber and the RF generator, wherein the system controller is configured to set a first recipe having a plurality of steps that define the operating frequency for the RF generator equal to a nominal frequency, the first recipe being used to etch one or more layers of material disposed over a substrate in the chamber; wherein the system controller is further configured to analyze each step with the operating frequency equal to the nominal frequency, the analysis determining if any step produces instability at the nominal frequency, and adjust the operating frequency for one or more of the steps when the instability in the one or more steps exceeds a threshold, the adjusting acting to find an approximate minimum level of instability; wherein the system controller constructs a second recipe after adjusting the operating frequency such that at least one of the steps includes a respective operating frequency different from the nominal frequency, the second recipe being used to etch the one or more layers disposed over the substrate in the chamber.