Process of making a MOS transistor.

摘要

The method involves delimiting an insulating region, and forming a gate region (G), source and drain regions which delimit a channel such that the gate region extends above the channel. The insulating region is formed by locally forming a zone formed of silicon-germanium alloy, selectively etching the alloy with respect to silicon and depositing a dielectric material at the etched place. The etching is performed after forming the gate region above a silicon-on-insulator semiconductor substrate deposited above a buried oxide layer. An independent claim is also included for an integrated circuit comprising a metal oxide semiconductor transistor.