| 摘要 |
<p>The present invention relates to a light emitting device and, more particularly, to a nitride light emitting device using a silicon substrate and a manufacturing method thereof. The present invention includes a semiconductor structure which includes a nitride semiconductor, a first side, a second side which is opposite to the first side, and a third side which is located at a height between the first side and the second side, the silicon substrate which includes an opening part to expose at least part of the first side on the first side of the semiconductor structure, a first electrode which is located on the third side of the semiconductor structure, and a second electrode which is located on the second side of the semiconductor structure.</p> |
