| 摘要 |
Provided are a method for forming a silicon film containing carbon with few impurities, and an apparatus for forming the same. The method for forming the silicon film containing carbon comprises an absorption step and a chlorine removing step. In the absorption step, tetrachlorosilane is supplied into a reactor where a semiconductor wafer is accommodated and then is activated, and a silicon adsorbate is adsorbed to the semiconductor wafer by reacting the activated tetrachlorosilane and the semiconductor wafer. In the chlorine removing step, triisopropyl boron is supplied into the reactor and then is activated, and chlorine included in the silicon adsorbate is removed by reacting the activated triisopropyl boron and the silicon adsorbate. And, the absorption step and the chlorine removing step are repeated in plural times by the same sequence. |
