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发明名称
SEMICONDUCTOR DEVICE
摘要
<p>ESD 보호용 오프 트랜지스터의 오프 누설 전류를 억제하기 위해, 격리 영역이 셸로우 트렌치 구조를 갖는 ESD 보호용 NMOS에서, ESD 보호용 NMOS 트랜지스터의 드레인 영역이 적어도 ESD 보호용 NMOS 트랜지스터의 게이트 전극에 인접한 영역에서 셸로우 트렌치 격리 영역과 직접 접촉하지 않도록, 드레인 영역이 셸로우 트렌치 격리 영역으로부터 이격되어 놓인다.</p>
申请公布号
KR101549701(B1)
申请公布日期
2015.09.02
申请号
KR20080082594
申请日期
2008.08.22
申请人
发明人
分类号
H01L21/762;H01L27/04
主分类号
H01L21/762
代理机构
代理人
主权项
地址
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