| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing technology of a semiconductor device for a longer emission wavelength from a quantum dot while suppressing occurrence of a misfit dislocation. <P>SOLUTION: A single crystal substrate is mounted in a chamber, and a quantum dot containing In and As is formed on the single crystal substrate by molecular beam epitaxy. A first annealing is performed in the chamber by radiating at least As<SB POS="POST">2</SB>molecular beam to the quantum dot. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
