发明名称 Method of fabricating a semiconductor device and semiconductor product
摘要 A method of fabricating a semiconductor product includes the processing of a semiconductor wafer (10) from a front surface including structures disposed in the substrate (100) of the wafer adjacent to the front surface and the forming of at least one wiring (110) embedded in a dielectric layer (111) disposed on the front surface of the wafer. The semiconductor wafer is mounted to a carrier wafer (120) at its front surface so that material can be removed from the backside of the wafer to thin the semiconductor wafer. Backside processing of the semiconductor wafer includes the forming of implantations from the backside of the wafer, the forming of deep trenches (132a, 132b) to isolate the structures from other structures within the wafer, the forming of a through silicon via (134) to contact features on the frontside of the wafer and the forming of a body contact (131). Several devices can be generated within the same wafer.
申请公布号 EP2913847(A1) 申请公布日期 2015.09.02
申请号 EP20140157287 申请日期 2014.02.28
申请人 LFOUNDRY S.R.L. 发明人 SPITZLSPERGER, GERHARD;SCHMIDT, CARSTEN
分类号 H01L21/768;H01L21/74;H01L21/762;H01L21/8234;H01L29/417;H01L29/66;H01L29/78 主分类号 H01L21/768
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