| 摘要 |
Provided is a method for etching an area constituted with oxidized silicone. The method of the embodiment includes: (a) a process which exposes an object having an area constituted with the oxidized silicone to plasma of processing gas including fluorocarbon gas, and etches the area and forms deposits including fluorocarbon on the area; and (b) a process of etching the area by a radical of the fluorocarbon included in the deposits. According to the method, the process (a) and the process (b) are repeated in turn. |
