| 摘要 |
<p>A semiconductor device according to the present technology includes: a stacked body comprising alternately stacked conductive patterns, and insulating pattern between layers; a through-hole penetrating the stacked body; a channel pattern formed on the inside of the through-hole by being protruded from the inside of the through-hole to the top of the through-hole; and a capping conductive pattern formed with a width wider than the through-hole by coupling to a surface of the channel pattern comprising a side wall of the channel pattern protruded to the top of the through-hole.</p> |
