| 摘要 |
<p>Provided in the present invention is a thin film transistor substrate including a substrate, a first thin film transistor, a second thin film transistor, and multiple storage capacitor. The first thin film transistor is arranged on the substrate, and includes a polycrystal semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode. The second thin film transistor arranged on the substrate to be separated from the first thin film transistor, and includes an oxide semiconductor layer, a second gate electrode, a second source electrode, and second drain electrode. The multiple storage capacitors are arranged to be separated from the first and second thin film transistors. At least three electrodes located on different layers are formed with electrodes same to a gate electrode and a source-drain electrode of the first and second thin film transistors, and at least one electrode located over at least three electrodes are formed with electrodes different from the gate electrode and the source-drain electrode of the first and second thin film transistors. The first gate electrode is covered a first intermediate insulation film formed with a nitride film, and the second gate electrode arranged over the first gate electrode is covered by a two intermediate insulation film formed with an oxide film.</p> |
